Structural evolution of a Ta-filament during hot-wire chemical vapour deposition of Silicon investigated by electron backscatter diffraction

Abstract

We report on the application of electron backscatter diffraction to investigate the structural changes of a tantalum filament operated at typical hot-wire chemical vapour deposition conditions for the synthesis of hydrogenated nanocrystalline silicon. Various tantalum-silicides, identified by electron backscatter diffraction, form preferentially along the length of the filament. The filament has a recrystallized Ta inner core and a TaSi2 layer encapsulated with a Si layer at the cooler ends. The αTa5Si3, metastable Ta5Si3 and Ta2Si phases formed in addition to recrystallized Ta and TaSi2 at the centre regions. Cracks and porosity were prevalent throughout the length of the filament. The microstructural evolution of the aged tantalum filament can be ascribed to the thermal gradient along the filament length, recrystallization of Ta and the variation of silicon content within the filament.