Structural evolution, electronic and magnetic properties investigation of V3Sin− (n = 14–18) clusters based on photoelectron spectroscopy and density functional theory calculations

Abstract

Silicon clusters doped with a transition metal (TM) atom have been intensively studied due to their novel properties and superior stability for possible usage as building blocks of future nanoelectronics. Besides the selection of the doped element, introducing the number of dopant atoms as another dimension adds versatility to tuning the cluster properties. However, there are few studies of silicon clusters doped with multiple TM atoms. Here, we present a study of V3Sin− (n = 14–18) by combining high-resolution photoelectron spectroscopy (PES) measurements with a search of their global minimum energy structures based on a homemade genetic algorithm coupled with density functional theory (DFT) for energy calculations. The simulated photoelectron spectra of the putative global minimum structures are in fair agreement with the experimental ones, which gives evidence for their authenticity as the ground-state structures. In these clusters the three V atoms always bond with each other and form an acute triangle, which can be seen as a nanoscale analogue of phase segregation in the bulk. For the size range n = 14–17, each of the ground-state structures has a silicon basket-like structure with the vanadium triangle inside, while V3Si18− has a baseball-mitt-like structure almost completely encapsulating the V3 triangle. The average binding energy of TMSin− (TM = V1, V2, V3) indicates that the more V atoms are doped the more stable the clusters are. Among these clusters, only V3Si14− have a total magnetic moment of 2 μB, making it a potential structural unit for magnetic storage devices. Mulliken population analysis and the electron spin density show that V atoms at different positions have different contributions to the total magnetic moments, and d electrons in V atoms contribute the most.