Abstract
The relationship between structure and electronic properties of phosphorus-doped hydrogenated amorphous silicon (a-Si: H) thin films was investigated. Samples with different features were prepared by plasma enhanced chemical vapor deposition (PECVD) at various substrate temperatures. Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy were used to evaluate the structural evolution, meanwhile, electronic-spin resonance (ESR) and optical measurement were applied to explore the electronic properties of P-doped a-Si: H thin films. The results revealed that the changes in materials structure affect directly the electronic properties and the doping efficiency of dopant.
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