Abstract
High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was confirmed by comparing the thicknesses measured by spectroscopic ellipsometry with the expected. It was also found that the locations of the (100) diffraction peaks shift towards lower diffraction angles as Ti concentration increased. For all samples, optical transmittance over 80% was obtained in the visible region. The sample with ALD cycle ratio of ZnO/TiO2 being 20 had the lowest resistivity of 8.874 × 10−4 Ω cm. In addition, carrier concentration of the prepared films underwent an evident increase and then decreased with the increase of Ti doping concentration.
Highlights
Ti-doped ZnO thin films with the thickness of around 100 nm were prepared by atomic layer deposition (ALD) at 200°C
The fact that film thicknesses measured by spectroscopic ellipsometry were thinner than expected for samples with ALD cycle ratio of ZnO/TiO2 less than 10 suggested a hampered growth mode of ZnO on TiO2 layer
Tidoped ZnO (TZO) films synthetized by ALD crystallized preferentially along the [100] direction
Summary
The application of transparent conductive oxide (TCO) has been found in many areas such as liquid crystal displays, touch panels, and organic light-emitting diodes because of its excellent conductivity and high transmittance for visible light [1,2,3,4]. Indium tin oxide film is the most popular material and has been widely used in many optoelectronic devices It has excellent transparency (greater than 85% transparency in visible spectrum) together with high conductivity (resistivity around 2 to 4 × 10−4 Ω cm) [5], research on alternative materials is urgent due to the relative scarcity and high cost of indium. Among the variety of metallic element-doped ZnO films, Ti-doped ZnO films have been investigated recently for their unique electrical, magnetic, and sensing properties. Rare reports focused on Ti-doped ZnO films fabricated by ALD. Compared with those of main group metal-doped ZnO films, the. The effect of Ti doping concentration on the structural, optical, and electrical properties of the deposited TZO films was systematically studied by spectroscopic ellipsometry, X-ray diffraction, atomic force microscopy, transmission spectrometry, and Hall measurement
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