Abstract
Abstract Novel indium-doped brookite phase TiO2 films with different In concentrations were successfully prepared on the yttria-stabilized zirconia (YSZ) (110) substrates by the metal organic chemical vapor deposition (MOCVD) technique. The structural, morphological, electrical and optical properties of the films were investigated in detail. X-ray diffraction analysis revealed that all the films with different In concentrations were pure brookite phase TiO2 with only one orientation along the b-TiO2 (120) direction. The resistivity of the films was reduced by almost eight orders of magnitude by In doping with the lowest resistivity of 7.4 × 10−2Ω⋅cm and a mobility of 8.3 cm2 V−1 s−1 obtained for the 2.6% In-doped b-TiO2film. The average optical transmittance of the 2.6% In-doped sample exceeded 74% in the visible range and the optical band gap was about 3.60 eV.
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