Abstract
The effects of O 2 plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. Ga-doped ZnO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion of PET substrate, O 2 plasma pretreatment process was used prior to GZO sputtering. With increasing O 2 plasma treatment time, the contact angle decreases and the RMS surface roughness increases significantly. The transmittance of GZO films on PET substrate in a wavelength of 550 nm was 70–84%. With appropriate O 2 plasma treatment, the resistivity of GZO films on PET substrate was 3.4 × 10 −3 Ω cm.
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