Abstract

Ga-doped ZnO (GZO) films with a thickness of 100 nm were prepared on cyclo-olefin polymer (COP) and glass substrates at various temperatures below 100 °C by ion plating with direct-current arc discharge. The dependences of the characteristics of GZO films on the substrate temperature Ts were investigated. All the polycrystalline GZO films, which exhibited a high average visible transmittance of greater than 86%, were crystallized with a wurtzite structure oriented along the c-axis. The lowest resistivities of the GZO films were 5.3 × 10 − 4 Ωcm on the glass substrate and 5.9 × 10 − 4 Ωcm on the COP substrate.

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