Abstract
Zn1−x B x O (0≤x≤0.04) thin films were deposited by the liquid source misted chemical vapor deposition (LSMCD) method. The thin films were polycrystalline with grain sizes of 16 nm to 22 nm. The structural, optical, and electrical properties were investigated by X-ray diffraction, UV-visible spectrophotometry, Raman spectroscopy, and Hall effect measurement. Also scanning electron (SEM) and atomic force microscopy (AFM) techniques were used in order to determine the morphological and topological characteristics of the films. The optimal result of Zn1−x B x O films was obtained at x=0.02, with a low resistivity of ≈10−2 Ω cm, and a high transmittancy of 85% in the visible light spectrum (300 nm ∼ 800 nm).
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