Abstract
Thin films of Ti-doped ZnO (TZO) have been deposited using Atomic Layer Deposition (ALD) achieving highly conductive materials with resistivities down to 1.8×10−3Ωcm at 1.7cat% Ti doping, with a maximum dopant efficiency of 31%. The high conductivity and doping efficiency suggests a good distribution of dopants, otherwise a common challenge for doping by ALD. The charge mobility for Ti concentrations below 1.2cat% was higher than for pure ZnO. The texture of the films changed from a predominantly c-axis to a-axis orientation with increasing Ti concentration, while the lattice parameters remained unaltered. The TZO films were highly transparent with an absorbance in the visible range of less than 2% for 200nm films. The band gap increased with Ti content from 3.28eV for pure ZnO to 3.67eV for 5.9cat% Ti, attributed to the Burstein Moss effect. The index of refraction varied with the Ti content showing a minimum of 1.90 for 1.7cat% Ti.
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