Abstract
Polycrystalline Fe3-xPtxO4 films have been prepared by cosputtering at room-temperature. The composition, magnetization and Hall effect measurements indicate that Pt ions have been doped at B-sites. The resistivity is dominated by fluctuation-induced tunneling and decreases with increasing x. The absolute magnetoresistance at room-temperature is above 7% for x≤0.07. The carrier concentration is lower than that of the single-crystal and epitaxial films. A scaling relation of σxy∝σxxn between the Hall and longitudinal conductivities is obtained for all samples, which fits well with the recent developed universal scaling theory. The decreasing trend of the exponent n from 1.72 to 1.57 with increasing x could be qualitatively ascribed to the influence of the Pt2+ ions on the magnetic scattering center concentration of the B-sites Fe2+ ions. These findings make the Fe3-xPtxO4 film a useful candidate for spintronic or extraordinary Hall effect devices applications.
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