Abstract
Since the high thermal resistance of InGaAs metamorphic high electron mobility transistors (MHEMTs) limits their applicability, thermal management should be taken into account when designing the device structure. In this study, structural effects on heat dissipation in InGaAs MHEMTs were carefully investigated and experimentally validated. With an air bridge thickness of 10 µm and a gate pitch distance of 24 µm, the maximum channel temperature in a flip-chip bonded device was noticeably reduced from 132 to 106 °C (i.e. corresponding thermal resistance from 252.17 to 178.14 K W−1). Improved heat dissipation with the proposed structure was experimentally validated using backside-mounted devices by an infrared temperature measurement method.
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