Abstract
Recently, silicon trenches have been widely used for device isolation or three‐dimensional capacitors in dynamic memories. In this work, trenches with submicron openings have been fabricated and several structure‐dependent effects were discovered. A reactive ion etching rate in the vertical direction inside a trench decreases significantly as the aspect ratio (depth/width) becomes larger. A bottle‐shaped profile due to undercutting starts to appear with trenches whose openings are smaller than a micrometer and becomes worse as the width decreases. A film thickness on sidewalls for refilling trenches shows no strong dependence on the structural aspect when chemically vapor deposited at low pressure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
