Abstract
AbstractTransmission Electron Microscopy shows that the InN samples doped with either increasing or constant Mg concentration follow a cation or anion substrate polarity. In‐polar samples change growth polarity when the Mg concentration is >1019cm‐3. N‐polar samples have much higher density of planar defects than In‐polar samples and their presence leads to a decrease in dislocation density. In the N‐polar samples equally spaced planar defects are observed for Mg concentration >1019cm‐3. Three different polytypes (2H, 3C and 4H) were observed in this type of samples. A band of planar defects with thick layers of a cubic material (3C) is observed for Mg concentration >1020cm‐3. At this Mg concentration only n‐type conductivity was reported earlier. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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