Structural, dielectric, impedance, complex modulus, and optical study of Ni-doped Zn(1−x)NixO nanostructures at high temperatures

Abstract

This experiment addressed the effect of Nickel-doped on the dielectric, ac conductivity, and optical properties of pure and doped Zn (1−x) Nix O (x = 0, 3 and 6%) nanostructures. The un-doped and Ni-doped ZnO nanostructures were synthesized using co-precipitation. In this paper, the frequency-dependent dielectric and the electrical conductivity of un-doped and Ni-doped Zn (1−x) Nix O nanostructures were examined at various temperatures ranging from 320 K to 460 K using an LCR meter. For the morphological and optical investigation, the prepared samples were analyzed using field emission-scanning electron microscopy (FE-SEM), and UV visible Spectroscopy was used at room temperature. The dielectric constant (), dielectric loss (), tangent loss (tan δ), the real as well as the imaginary part of the impedance against the frequency ranging from 100 Hz to 2 × 106 Hz that declines with increases in frequency at different temperatures ranging from 320–460 K. However, the electrical conductivity () increased with the increase in frequency was examined. The ac conductivity () follows Jonscher,s power law that the electrical conductivity is enhanced with increasing doping concentration. The optical transmission area also improved due to an increase in Ni-doping concentration in ZnO. The optical bandgap of pure and Ni-doped ZnO nanostructures is in the range lies 3.30–3.12 eV found that to decrease with the increase in Ni doping concentrations.