Structural, dielectric and electrical characteristics of manganese modified (Bi0.5Ba0.25Sr0.25) (Ti0.5Fe0.5)O3 relaxor

Abstract

In this communication, detailed studies of the structural, microstructural, dielectric, and electrical properties of polycrystalline materials, (Bi0.5Ba0.25Sr0.25) (Ti0.5Fe0.5)O3 and (Bi0.5Ba0.25Sr0.25) (Ti0.25Mn0.25Fe0.5)O3, synthesized by using a high–temperature solid-state-reaction method, have been reported. X-ray structural and scanning electron micrograph studies exhibit phase pure tetragonal system and surface morphology (size and distribution of grains and grain boundaries) of the samples respectively. Analysis of the temperature and frequency dependence of dielectric and electrical (impedance, modulus, and conductivity) data reveals the ferroelectric relaxor behavior, relaxation mechanism, and semiconductor (negative temperature coefficient of resistance) properties of the bulk BFBST and Mn modified BFBST electro-ceramics. The relaxation time and activation energy (Ea) were calculated from the above data. The characteristics of Mn modified BFBST have been compared to that of it’s parent (BFBST) compound. The different inherent conduction mechanisms, such as Ohmic, hopping, space charge limited (SCLC) have been analyzed. The bulk- and interface-limited conduction processes were evidently found in the materials by the Poole–Frenkel (PF) and Schottky (SEmen modified BFBST have been compared to that of its parent (BFBST) compound) emission fitting of the J ∼ E characteristic data. The leakage data of BFBST-Mn (Mn modified Mn) quantified the average energy gap (Eg) in the range of 0.83–0. 87 eV for different applied voltages and in a wide range of temperature (25 °C–300 °C). With the increase in voltage, Eg decreases. This work suggests that Mn-substitution (Mn4+) at B (Ti4+) site keeping the stoichiometry undisturbed enhances structural, dielectric response (higher dielectric constant) and reduce the leakage behavior especially at low temperature and high-frequency range.