Abstract

Anatase to rutile phase transition (ARPT) of thermally-oxidized Ti films have been investigated via effect of sputtering power and oblique angle deposition (OAD) technique. ARPT is controlled via the sputtering power of Ti films in a range of 50–200 W. Mechanism of ARPT is proposed in terms of oxidation rate on the different morphological structures of Ti films. Increase in sample mass with different oxygen content of thermally-oxidized Ti films is controlled via sputtering power. The evidence of FE-SEM, GIXRD, and EDS corresponded well and in agreement with the optical evolution of transmittance spectra and the correlation of energy band gap (Eg) with the feature of the TiO2 phases. The TiO2 films showed the lowest water contact angle of 7° under UV irradiation for mixed anatase-rutile phases condition.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call