Structural defects of the Si(111)√3×√3-B surface studied by scanning tunneling microscopy

Abstract

Scanning tunneling microscopy has been used to study structural defects of the Si(111)√3×√3-B surface phase formed by high-temperatur annealing of the B-doped Si samples. The typical defects have been found to be (a)occupation of a B position by a Si atom, (b) Si adatoms in H 3 positions, (c) regions of other reconstructions (2×2 and c(4×2)), (d) two types of ring-like six-adatom defects and (e) deep holes (vacancies). The atomic structure of the defects has been clarified. The effect of the different heat treatments and B coverage on the density of defects has been elucidated.