Abstract
ABSTRACTWe have investigated the structural defects formed in Mg-doped GaN and AlGaN epitaxial layers grown by metal organic chemical vapor deposition. These defects have an inverse pyramidal shape and appear when the Mg concentration [Mg] is higher than ∼4×1019/cm3. The density of the defects increases as [Mg] increases, but the size of the defects becomes smaller as [Mg] increases. The density of the defects also has a strong correlation with the hydrogen concentration in the epitaxial layers. Transmission electron microscope analysis reveals that the defects have an inversion operation to the matrix and that their boundaries are Mg-rich. We also propose a model for defect formation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
