Abstract
Memristive Properties of Perovskite-Based Planar Devices Redox-based resistive random access memories (ReRAM) show great potential to improve current electronic devices' storage capabilities. In perovskites, variations in oxygen stoichiometry are directly linked to changes in resistance, governing the devices' switching characteristics. In article number 2200498, Carlos Moncasi, Mónica Burriel, and co-workers study the memristive properties of novel perovskite-based planar devices and obtain new insights into the key role of the films' nanostructure.
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