Abstract
The controlled tuning of the graphene Fermi level via doping, without degrading the unique band structure makes it an appealing candidate for low dimensional-based integrated devices. We demonstrate a comparative analysis of UV irradiations on graphene-based field effect transistors (FETs) enclosed and unenclosed in quartz tube. The Raman spectroscopy reveals p-type doping in UV irradiated graphene-based FETs. However, emergence of an additional D-peak in Raman spectrum during UV irradiations on graphene unenclosed in quartz tube signifies the degradation of perfect crystal structural of graphene. These results are further corroborated with X-ray photoelectron spectroscopy and electrical transport measurements. The shift of the Dirac point towards positive gate voltages reveals p-type doping in UV irradiated graphene-based FETs. However, mobility of the graphene device unenclosed in quartz tube is decreased while the sample enclosed in quartz tube significantly retains its mobility. These results shed light on the formation of natural structural defects in graphene, which is an essential factor for practical visualization of graphene-based electronic and optoelectronic devices.
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