Abstract
Experimental results of structural defect visualization and oxide breakdown in SiC wafers after thermal oxidation is presented. The long-range influence of bulk defects on the oxidation behavior of the C-face of SiC wafers, as well as the delineation of polishing marks on the Si face, after oxidation, is presented. High field measurements on a large number of MOS-capacitor structures, fabricated on the SiC wafers, indicates that while oxide breakdown was never observed to occur in the region atop a micropipe, it generally coincided with the edge of bulk defects (within the SiC wafer) under the gate contact.
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