Structural correlation in tantalum nitride formation by direct nitrogen implantation

Abstract

Tantalum targets were implanted with 80 keV nitrogen ions at doses from 5 × 10 16 to 5 × 10 17 N cm −2 at room temperature. X-ray analyses of the implanted layers show a correlation between the types of nitrides formed and the implantation dosage. As the nitrogen content increases nitrogen-rich nitrides start forming. Ta 2N first forms at the lower implantation level; at higher doses TaN starts forming. Possible shearing mechanisms responsible for nitride formation are proposed.