Abstract
Highly-oriented polycrystal 3C-SiC bulks were ultra-fast fabricated via halide chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors. The effects of deposition temperature (Tdep) and total pressure (Ptot) on the orientation and surficial morphology were investigated. The results showed that the growth orientation of 3C-SiC columnar grains was strongly influenced by Tdep. With increasing Tdep, the columnar grains transformed from <111>- to <110>-oriented. The arrangement of <111>-oriented columnar grains was controlled by Ptot. Lotus-, turtle-, thorn-, and strawberry-like surface morphologies were naturally contributed by different arrangements of <111>-oriented grains, and the deposition mechanism was discussed. The wetting behaviors of CVD-SiC samples by molten aluminum were also examined at 1173 K in a high vacuum atmosphere.
Highlights
The cubic polytype of SiC (3C-SiC) can be used as a structural material, in harsh environments, due to its high hardness and strength, and good thermal shock resistance and corrosion resistance [1,2,3]
Graphite materials with polycrystal 3C-SiC coatings are always used as heater or furnace walls in semiconductor annealing/doping furnaces, due to the good thermal shock resistance and corrosion resistance of 3C-SiC coating
The 3C-SiC coating with poor wettability is easy to clean, whereas Al droplets are harder to remove from coating with a smooth surface
Summary
The cubic polytype of SiC (3C-SiC) can be used as a structural material, in harsh environments, due to its high hardness and strength, and good thermal shock resistance and corrosion resistance [1,2,3]. SiC bulks are densified using method such as pressureless sintering, spark plasma sintering, and liquid-phase sintering with additives (Al2 O3 , AlN, B, C, and B4 C) [4,5,6,7,8]. These additives negatively affect the high-temperature properties, which may cause defects. Graphite materials with polycrystal 3C-SiC coatings are always used as heater or furnace walls in semiconductor annealing/doping furnaces, due to the good thermal shock resistance and corrosion resistance of 3C-SiC coating.
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