Abstract
We compared the structural characteristics of a silica layer formed on Si(100) by oxidation in hyperthermal atomic oxygen and molecular oxygen at 493K. The laser detonation method was used to create primarily neutral atomic oxygen with kinetic energy of 5.1eV. The silicon oxides were characterized by High resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). We determined that atomic oxygen forms amorphous silica that is almost twice as thick and nearly double the surface roughness as compared to molecular oxygen – formed silica at the same temperature and time conditions
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