Structural characterization of zincblende Ga1−xMnxN epilayers grown by molecular beam epitaxy on (001) GaAs substrates

Abstract

Zincblende p-type Ga1−xMnxN epilayers, grown with and without AlN∕GaN buffer layers using plasma-assisted molecular beam epitaxy on (001) oriented GaAs substrates, have been investigated using a variety of complementary transmission electron microscopy techniques. The epilayers were found to contain a high anisotropic density of stacking faults and microtwins. MnAs inclusions were identified at the Ga1−xMnxN∕(001)GaAs interface extending into the substrate. The use of AlN∕GaN buffer layers was found to inhibit the formation of these inclusions.