Abstract
The Epitaxial GaN thin films have been fabricated by Ion Beam Assisted Deposition (IBAD) process using nitrogen ions with hyperthermal energies on the polyimides polymer substrates. By applying with the Reflection of High-Energy Electron Diffraction (RHEED), Scanning Electron Microscopy (SEM) and Quantum Design Physical Properties Measurement System, the behaviour of hexagonal GaN thin films is investigated. The result showed that the high quality of the deposited GaN layers kept appearing for many parameters depending on the temperature greatly. The behaviour of high quality of epitaxial GaN coating on the polyimide polymer substrates is a promising material for optoelectronic devices and semiconductor devices application.
Highlights
Thin film of gallium nitride (GaN) is a prospering material application for semiconductor devices [1] [2] and optoelectronic devices [3]
The growth of thin, high quality GaN layers on polyimide substrates is of great interest
We report the growth of thin gallium nitride (GaN) on the polyimide polymer substrates by Ion Beam Assisted Deposition process (IBAD) using nitrogen ions with hyperthermal energies
Summary
Thin film of GaN is a prospering material application for semiconductor devices [1] [2] and optoelectronic devices [3]. Gallium nitride is a binary III/V semiconductor occurring in three crystalline modifications: A hexagonal structure as the wurtzite polytype (w-GaN), and two different cubic structures as the zinc blende polytype (z-GaN) and the NaCl structure (c-GaN) [4]. The most cases of thin film semiconductor are grown epitaxial on crystalline. For the deposition on polymer materials, the semi-crystalline or amorphous character of these materials has to be considered. Energy activation for adsorption and diffusion decreased, and stored
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