Abstract
A SiGe graded buffer with a Si 1− x Ge x /Si superlattice on top was grown on top of long, line shaped mesa structures being 2–10 μm in width. Although extended over a length of 2 mm the drastic reduction of the dislocation density, as recently reported for small mesas, was maintained if the mesas were aligned along certain crystallographic directions. Depending on the crystallographic orientation, an asymmetric strain relaxation was observed. Regarding band engineering this adds geometry as a new free parameter.
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