Abstract
AbstractA range of techniques were used to characterize p++ silicon layers created by boron diffusion into (001) silicon wafers. These films were characterized by TEM, EBIC/ SEM, triple-axis XRD, SIMS, and modified Schimmel etching. Boron profiles predicted by SUPREM-3 process simulation software were compared to SIMS data. The results revealed gradients in boron and lattice constant, as well as a graded three-dimensional dislocation array from lattice-mismatch stress. Boron precipitation, induced by lattice-mismatch stress and concentrations above the solubility limit, was found to occur preferentially on dislocations. Additionally, the presence of dislocations was shown to affect the boron diffusion profile as well as etch morphology.
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