Abstract
ABSTRACTP-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.
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