Abstract
In x Ga 1− x As layers on InP substrate can be subjected to compressive or tensile strain due to lattice parameter differences depending on the alloy composition. In order to examine in details the strain of InGaAs/InP epiatxial layers and its evolution after subjecting the layers to annealing at high pressure, X-ray synchrotron topography, high resolution X-ray diffraction and atomic force microscopy have been employed. The data show that the changes of structural properties of the InGaAs layers subjected to high temperature–high pressure treatment at 670 K–1.2 Gpa, strongly depend on initial strain state and defect structure. The annealing of samples under high pressure results in change of strain in tensile layers only. The behaviour of observed defects is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
