Structural Characterization of Doped GaSb Single Crystals by X-ray Topography

Abstract

We characterized GaSb single crystals containing different dopants (Al, Cd, and Te), grown by the Czochralski method, using x-ray topography and high-angular-resolution x-ray diffraction. Lang topography revealed dislocations parallel and perpendicular to the crystal surface. Double-crystal GaSb 333 x-ray topography showed dislocations and vertical stripes that could be associated with circular growth bands. We compared our high-angular- resolution x-ray diffraction measurements (rocking curves) with findings predicted by the dynamical theory of x-ray diffraction. These measurements show that our GaSb single crystals have a relative variation in the lattice parameter (Δd/d) on the order of 10−5. This means that they can be used as electronic devices (e.g., detectors) and as x-ray monochromators.