Abstract
Anodizing aluminum in etidronic acid (1-hydroxyethane-1,1-diphosphonic acid) causes the formation of porous alumina at higher voltage more than 200 V. Highly ordered porous alumina with a large-scale cell can be easily fabricated via two-step constant voltage anodizing in etidronic acid. However, extremely little has been reported on the growth behavior during galvanostatic anodizing in etidronic acid and its structural characterization. In the present investigation, we demonstrate the details of the anodizing behaviors and nanostructures of the porous alumina formed via galvanostatic anodizing in etidronic acid under various operating conditions. High-purity aluminum plates were electrochemically polished, and then were anodized at a constant current density of 0.005-500 Am-2 in 0.03-3 M etidronic acid solutions (273-333 K). After anodizing, the specimens were immersed in a 0.20 M CrO3/0.51 M H3PO4 solution (353 K) to dissolve the porous alumina, and the aluminum dimple array was exposed to the surface. The surface and cross-section of the anodized specimens were examined by field-emission scanning electron microscopy (FE-SEM). The cell size (interpore distance) of the porous alumina was calculated using image analysis software. As the electropolished aluminum specimens were anodized galvanostatically under various conditions, the voltage linearly increased, gradually decreased, and then reached plateau value (U p). However, excess current density led to a burning phenomenon and the formation of non-uniform porous alumina. Figure 1 shows the changes in the plateau voltage, U p, and the current density, i a, during anodizing in a 0.3 M etidronic acid solution. The plateau voltage greatly increased with the current density at each temperature, and various porous alumina films were successfully fabricated by anodizing at a wide voltage range measuring 7-218 V. Figure 2 shows the relationship between the cell size, D c and the anodizing voltage, U a. The cell size linearly increased with the anodizing voltage at each solution temperature and current density. A linear proportional constant of 2.5 nmV-1 was obtained, which is similar to the self-ordering condition via constant voltage anodizing. Figure 1
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