Abstract
AlxGa1−xSb ternary solid solutions lattice-matched to the GaSb (001) substrate with composition in the range 0.05≤x≤0.2 were grown by liquid phase epitaxy. High resolution X-ray diffraction and Raman scattering techniques were applied to characterize AlxGa1−xSb alloys. The out of plane lattice parameter was estimated directly from the asymmetrical diffractions of planes (115) and (−1−15). The out of plane lattice parameter as a function of Aluminium content is higher than the corresponding bulk lattice parameter of AlxGa1−xSb layers obtained with Vegard's law. These results show that some of the layers are more strained than others. Two peaks are observed in their Raman spectra over this composition range. The assignment of the observed modes to GaSb-like modes is discussed. The studies of the chemical composition of the layers by SIMS exhibit the presence of tellurium, carbon and oxygen like the main residual impurities.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
