Abstract
The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current–voltage (I–V) characteristics of GaN NDs were studied in a metal–semiconductor–metal configuration. Dark I–V characteristics of lateral grown GaN NDs obeyed the Frenkel–Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330 A/W with an external quantum efficiency of 1100%.
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