Abstract
Stoichiometric bulk ingot material of the quaternary CdGaInSe 4 was prepared by direct fusion of the constituent elements in vacuum-sealed silica tubes. Nearly stoichiometric films could be deposited by thermal evaporation of the ingot material in 10 −3 Pa vacuum at a deposition rate 1.5 nm/s. Crystal structure investigation was carried out using X-ray diffractometry and transmission electron diffraction. Elemental composition was determined by means of energy-dispersive X-ray spectrometry. CdGaInSe 4 possesses a tetragonal defective chalcopyrite structure (space group I ¯ 4 ) with lattice parameters a=0.5665 nm and c=1.1221 nm. All the films exhibited n-type conduction and ohmic behaviour with metallic films of Au, Cd, In, Ag and Sb. However, in the case of Al a nonlinear behaviour occurs. Analysis of the temperature dependence of the dark conductivity in the range 130–470 K has revealed three operating conduction mechanisms; a variable range hopping conduction process dominating at low temperatures below 270 K, followed by a transport of the charge carriers across intercrystalline barriers and grain boundaries in the temperature range 270–353 K, and finally an extrinsic conduction above 353 K.
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