Abstract
Stacked SiOxNy/Ta2O5 films have been deposited on strained-Si0.82Ge0.18 layers at a low temperature in a microwave plasma using NO and tantalum pentaethoxide. The chemical binding states and composition of stacked Ta2O5/SiOxNy/SiGe films have been studied by time of flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy. Effects of annealing on the electrical properties of the dielectric films have been studied using high frequency capacitance–voltage, current–voltage and conductance–voltage techniques.
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