Abstract
AbstractWe report on the growth of semipolar InN ($11\overline {2} l$) films on yttria stabilized zirconia (YSZ) substrates by pulsed laser deposition. We found that the growth orientation can be precisely controlled by utilizing the tendency for the epitaxial relationships of InN [0001] || YSZ [111] and InN [$11\overline {2} 0$] || YSZ [$1\overline {1} 0$] to be maintained. The full‐width at half‐maximum of the $11\overline {2} 6$ X‐ray rocking curves for an InN ($11\overline {2} 7$) film varies from 0.61 to 0.46° depending on the X‐ray angle of incidence.
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