Abstract
In this paper, we report the growth of Zn 1 − x Mn x Se films on GaAs(100) substrates by hot wall epitaxy up to an Mn concentration of x = 0.52. The crystalline structures of the Zn 1 − x Mn x Se layers were characterized by X-ray diffraction and Raman scattering. At a low growth rate of 1 μm/h, Zn 1 − x Mn x Se films have demonstrated pure zinc-blende structure up to a composition of x = 0.50. At a high growth rate of above 2 μm/h, the films exhibited mixed phases of zinc-blende and hexagonal structures over the range 0.19 ≤ x ≤ 0.52. The achievement of (111) oriented single crystal Zn 1 − x Mn x Se epilayers on GaAs(100) substrates and its explanation are presented.
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