Abstract
CeO2:Er3+ films were deposited by electron-beam evaporation technique. Photoluminescence properties of Er3+ doped CeO2 films annealed in air atmosphere were investigated. Visible and near-infrared emission peaks were assigned to the transitions from 2H11/2, 4S3/2, 4F9/2, 4I11/2 and 4I13/2 levels to 4I15/2 level, respectively. The structure and the luminescent properties of CeO2:Er3+ films were characterized by X-ray diffraction, photoluminescence and photoluminescence excitation spectra. In addition, luminescence intensities of Er3+ and the intensity ratio of red/green emission peaks were also investigated. They were strong affected by the doping concentration of Er3+. With the good luminescent properties, CeO2:Er3+ films should be promising candidates for multifunctional applications.
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