Abstract
In this paper, we report the growth and material characteristics of ZnGa2O4 thin films on c-plane sapphire and Si(100) substrates by a radio-frequency magnetron sputtering. When deposited on sapphire, the ZnGa2O4 film showed a polycrystalline nature and a less randomly oriented, primarily with the (111), (222) and (511) planes parallel to the substrate surface. On Si(100), the ZnGa2O4 thin film was randomly oriented with (311)- and (020)-plane polycrystalline properties. Transmission electron microscopy analysis revealed that an amorphous-layer interface was formed on the Si(100) substrate and the microstructure of ZnGa2O4 became disordered. The ZnGa2O4/sapphire emitted ultraviolet photoluminescence and green emissions. The dominant optical transitions depended on the deposition temperature, oxygen and Zn contents, and nature of the substrate. The structural and optical properties of sputter-deposited ZnGa2O4 thin film on sapphire indicated that sapphire substrate is suitable for the growth of crystalline, high-quality ZnGa2O4 thin film.
Highlights
Zinc gallate (ZnGa2 O4 ) is a wide-band gap semiconductor oxide with a cubic spinel structure (Fd3m, a = b = c = 0.8335 nm, and α = β = γ = 90◦ )
The crystallinity of the ZnGa2 O4 film was evaluated by the full width at half maximum (FWHM) of the (111) peak
Polycrystalline ZnGa2 O4 thin films were deposited on sapphire and Si(100) substrates by RF
Summary
Zinc gallate (ZnGa2 O4 ) is a wide-band gap semiconductor oxide with a cubic spinel structure (Fd3m , a = b = c = 0.8335 nm, and α = β = γ = 90◦ ). The Ga3+ ion occupies the octahedral sites, and the. ZnGa2 O4 possesses an energy bandgap of approximately 5 eV and a conductivity of 30 Scm−1 [1]. UV light induces transitions of self-activated optical centers in the normal spinel structure of ZnGa2 O4 , giving rise to an intense blue luminescence. When doped with Mn and Cr, the emission spectrum of ZnGa2 O4 ranges from green to red [4,5]. ZnGa2 O4 phosphor has been investigated for its unique and good luminescence characteristics
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