Structural characteristics and microwave dielectric properties of Zn1−xBixVxW1−xO4-based ceramics for LTCC applications

Abstract

Herein, the improvement of the microwave dielectric properties and sintering characteristics of Zn1−xBixVxW1−xO4(x = 0–0.15)-based ceramics is reported. The results showed that an appropriate amount of doping could not only reduce the optimum sintering temperature from 1100° to 900°C, but also enhance the densification of the microstructures and increase the Q×f value from 5351 to 42525 GHz. Additionally, various structural parameters including the phase composition, crystal structure, vibrational and chemical bond characteristics that are correlated with the dielectric properties were systematically investigated. By considering the chemical bond characteristics, the first-principles calculations and the acquired Raman spectra, the interaction between W-O is stronger than Zn-O in the ZnWO4 structure, while the interaction between V-O is stronger than Bi-O in BiVO4. Interestingly, when the Zn0.97Bi0.03V0.03W0.97O4-based ceramics were sintered at 900 °C, improved microwave dielectric properties were acquired (εr =18.32, Q×f=42525 GHz, τf=−67.51 ppm/°C), which provides a promising candidate in low-temperature co-fired ceramics technology.