Abstract
Ga1−xMnxN films grown on semi-insulating GaAs(001) substrates at 680°C with fixed Mn flux and varied Ga flux demonstrated a transition from zinc-blende/wurtzite mixed phase growth for low Ga flux (N-rich conditions) to zinc-blende single phase growth with surface Ga droplets for high Ga flux (Ga-rich conditions). N-rich conditions were found favourable for Mn incorporation in the GaN lattice. α-MnAs inclusions were identified extending into the GaAs buffer layer.KeywordsDark Field ImagePlanar DefectReflection High Energy Electron DiffractionReflection High Energy Electron Diffraction PatternGaAs Buffer LayerThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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