Abstract
Microcrystalline (µc-) grains of Ge1-ySny (0.1<y<0.4) were precipitated by thermal treatments of amorphous films of a Ge1-xSnx(x<0.4) alloy deposited by co-sputtering. At higher temperatures grains of β-Sn came out, co-existing with those of µc-Ge1-ySny. Mössbauer spectroscopy was used to characterize states of Sn in a Ge-Sn alloy film. Optical properties, such as the real part ε1 of the complex dielectric constant for Ge0.65Sn0.35, also changed as the structure change, especially at a photon energy of 1.6∼1.8 eV, where ε1 took a maximum. It was suggested that an amorphous Ge-Sn alloy might be a good material for archival-type optical storage.
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