Abstract
The influence of the implantation with fast nitrogen ions on GaAs single crystal structure is studied by several methods. The energy of nitrogen ions was 2.85 MeV/n and the dose was 5×10 14 cm −2. The scanning electron microscopy experiments have revealed that a damaged buried layer was created at a depth of 20 μm. The mathematical analysis of reciprocal space maps has shown that the N 2+ ion shot-through layers are only slightly deformed, whereas larger deformations, consisting in the existence of small areas of larger lattice parameter and local bending, are induced in the implanted part of the crystal.
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