Abstract
AbstractResults of X‐ray diffraction studies on structural changes in Si crystals caused by chemical etching for 40 s in HF, HNO3 solution and phosphorus‐ion implantation with the energy E = 100 keV and dose D = 8 × 1014 cm−2 are represented.Two‐ and three‐crystal X‐ray diffractometry methods are used for a quantitative assessment of structural changes occurring in the near‐surface crystal layers. Analysis of experimental rocking curves was made with the use of different approaches developed on the basis of kinematic and dynamic theory of X‐ray scattering in the imperfect crystals. A model of possible system of structural defects in the near‐surface silicon layers modified by chemical etching and ion implantation is proposed. The model accounts for the availability of respective sizes and concentrations of spherical and disc‐shaped cluster formations, dislocation loops.
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