Abstract
Thin Ni/Al and Ni/Ga layers of different atomic ratios were codeposited onto Si(001) at room temperature followed by subsequent annealing. Influence of annealing temperature on morphology and composition of ternary disilicide NiSi2-xAlx and NiSi2-xGax layers was investigated by transmission electron microscopy. Addition of Al or Ga leads to a decrease of the disilicide formation temperature from 700°C down to at least 500°C. Depending on the composition closed, uniformly oriented NiSi2-xAlx and NiSi2-xGax layers were observed after annealing at 900°C, whereas reaction of a pure Ni film with Si leads to the island formation with a mixture of A- and B-type orientations.
Highlights
In the recent decades strong interest has been drawn to the class of materials known as silicides [1], which are chemical compounds of silicon with different metals
Thin Ni/Al and Ni/Ga layers of different atomic ratios were codeposited onto Si(001) at room temperature followed by subsequent annealing
In this study we summarize the observed results and discuss the formation of silicide phases, their structure and chemical composition in Ni-Al-Si and Ni-Ga-Si thin film systems
Summary
In the recent decades strong interest has been drawn to the class of materials known as silicides [1], which are chemical compounds of silicon with different metals. Influence of annealing temperature on morphology and composition of ternary disilicide NiSi2-xAlx and NiSi2-xGax layers was investigated by transmission electron microscopy. Depending on the composition closed, uniformly oriented NiSi2-xAlx and NiSi2-xGax layers were observed after annealing at 900°C, whereas reaction of a pure Ni film with Si leads to the island formation with a mixture of A- and Btype orientations. Cross-sectional TEM imaging and electron diffraction revealed changes in the microstructure of pure Ni layers on Si(001) after annealing at different temperatures (Fig. 1).
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