Abstract
ABSTRACTThe hydrogen dilution in the course of production of amorphous silicon (a-Si) influences its structural properties, which affect significantly light-induced degradation. We used FTIR, X-ray reflectivity and GISAXS analysis to monitor the structural changes occurring during the low temperature annealing of undoped a-Si:H films. FTIR results show that upon annealing at very low temperatures, hydrogen is moved from its positions (voids) where it was accumulated unbonded to silicon and is subsequently trapped at dangling bonds, enhancing disorder. X-ray reflectivity and GISAXS measurements confirmed the enhancement of the void size.
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