Abstract
Si(001) vicinal surfaces heated with a sine wave of 104 Hz AC are investigated by using scanning reflection electron microscopy. Surfaces of 1×2 that consist of wide 1×2 terraces (the 1×2 dimer is perpendicular to the direction of the heating current) and narrow 2×1 terraces (the 2×1 dimer is parallel to the direction of the heating current) terraces were obtained at temperatures below 850oC. At temperatures between 850oC and 1100oC, on the other hand, double-domain surfaces where 2×1 and 1×2 terraces are arranged regularly with approximately equal widths were formed. The driving force for growth changes from thermal effect to evaporation effect at about 850oC. At temperatures above 1100oC, the surfaces are composed of mosaic domains due to the evaporation of the atoms.
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