Abstract
The use of Si(011)/Si(001) direct silicon bonding (DSB) substrates is a key for future complementary metal-oxide-semiconductor device technology. In conventional bonding process, it is necessary to remove interfacial SiO 2 to achieve direct atomic bonding. In this study, using X-ray microdiffraction and transmission electron microscopy, we investigate the structural changes caused by oxide out-diffusion annealing (ODA). It is revealed that crystallinity of the bonded Si(011) layer is degraded after low temperature ODA and gradually recovered with an increase in the ODA temperature and time, which is well correlated with the interfacial SiO 2/Si morphology. Characteristic domain textures depending on the ODA temperature are also detected.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
