Abstract
We performed in situ high-pressure synchrotron x-ray diffraction (XRD) and electrical transport measurements on topological semimetal TaSb2 in diamond anvil cells with pressures up to 60.0–63.0 GPa. No evident trace of structural phase transitions is observed from our XRD. A fit of the volume versus pressure data by using the third-order Birch–Murnaghan equation of state yields the bulk modulus B0= 131.2 ± 3.4 GPa and its first-order derivative B0′= 6 ± 0.3. From ambient pressure to 27.8 GPa, the low-temperature conduction behaviors of TaSb2 stay almost unchanged, exhibiting a power law with the exponent around 3; meanwhile, the magnetoresistance (MR) at 5 K follows a same relationship of MR∝Bm with m= 1.45 ± 0.10. These results imply that the topological semimetal state of TaSb2 may be robust subjected to pressure, at least to 27.8 GPa.
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